| PART |
Description |
Maker |
| GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT30J322 |
N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| BFC10 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC61 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BFC15 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC43 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
Seme LAB
|
| BFC50 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BFC47 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC13 |
4TH GENERATION MOSFET
|
TT electronics Semelab Limited
Seme LAB
|
| MIC-3396HC-M8E |
6U CompactPCI 4th Generation Intel? Core?i3/i5/i7 Processor Blade with ECC support
|
Advantech Co., Ltd.
|
| SML1004R2GXN |
4TH GENERATION MOSFET N?CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS
|
Seme LAB
|
